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| WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE VOLTAGE - 20 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low RDS(ON) R DS(ON) <60 m @VGS =-4.5V R DS(ON) <80 m @VGS =-2.5V R DS(ON) <105 m @VGS =-1.8V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg Value -20 Unite V V A A A W C/W C + -12 -3.4 -12 -1.25 1.25 100 -55 to 150 Device Marking WT2301=S01 WEITRON http://www.weitron.com.tw WT-2301 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current + VDS=0V, VGS=-10V Zero Gate Voltage Drain Current VDS=-16V, VGS=0V Drain-Source On-Resistance VGS=-4.5V, ID=-4.0A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A On-State Drain Current VDS=-5V, VGS=-4.5A Forward Transconductance VDS=-5V, ID=-5A -20 -0.6 -0.85 -1.5 + -100 1 60 80 105 V V nA uA m -20 5 rDS (on) 50 70 95 ID(on) gfs - - A S Dynamic (3) Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ Ciss Coss Crss - 926 183 141 PF Switching (3) Turn-On Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 ,RGEN =6 Rise Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 ,RGEN =6 Turn-Off Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 ,RGEN =6 Fall Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 ,RGEN =6 Total Gate Charge VDS=-10V, ID=-3A, V GS =-4.5V Gate-Source Charge VDS=-10V, ID=-3A, V GS =-4.5V Gate-Drain Charge VDS=-10V, ID=-3A, V GS =-4.5V Drain-Source Diode Forward Voltage VGS=0V, IS=-1.25A td(on) tr td(off ) tf Qg Qgs Qgd - 13.9 17.6 87.7 53.9 11.9 1.96 3.49 -0.795 - nS nS nS nS nc nc nc V - -1.2 VSD Note: 1. Surface Mounted on FR4 Board t < 10sec. _ < 300us, Duty Cycle < 2%. _ _ 2. Pulse Test : PW 3. Guaranteed by Design, not Subject to Production Testing. WEITRON http://www.weitron.com.tw WT-2301 10 -VGS =10.5~2.5V -I D , DRAIN CURRENT(A) -I D ,DRAIN CURRENT(A) WE IT R ON 25 25 C 20 15 10 5 0 0.0 0.5 1 1.5 2 2.5 3 -VGS , GATE-TO-SOURCE VOLTAGE(V) -55 C Tj =125 C 8 6 4 2 0 -VGS =1.5V 1 2 3 4 5 6 -VDS , DRAIN-TO-SOURCE VOLTAGE(V) FIG.1. Output Characteristics 1500 1200 Ciss 900 600 300 Coss 0 0 5 10 15 20 Crss 30 R DS(ON) , ON-RESISTANCE() FIG.2 Transfer Characteristics 2.2 1.8 1.4 1.0 0.6 0.2 0 -50 -25 0 -VGS =-4.5V I D =-4A -C ,CAPACITANCE( PF) 25 25 50 75 100 125 Tj ( C) -VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.3 Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 BVDSS ,NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE(V) GATE-SOURCE THRESHOLD VOLTAGE(V) FIG.4 On-Resistance Variation with Temperature 1.15 ID =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 VDS =VGS ID =250uA Vth ,NORMALIZED 0 25 50 75 100 125 T j ,JUNCTION TEMPERATURE( C) T j ,JUNCTION TEMPERATURE( C) FIG.5 Gate Threshold Variation with Temperature FIG.6 Breakdown Voltage Variation with Temperature WEITRON http://www.weitron.com.tw WT-2301 IS ,SOURCE-DRAIN CURRENT(A) WE IT R ON 20 10 18 gFS ,TRANSCONDUCTANCE(S) 15 12 9 6 3 VDS =-5V 0 0 5 10 15 20 25 1 TJ=25 C 0 0.4 0.6 0.8 1.0 1.2 1.4 IDS ,DRAIN-SOURCE CURRENT(A) V SD ,BODY DIODE FORWARD VOLTAGE(V) FIG.7 Transconductance Variation with Drain Current -VGS ,GATE TO SOURCE VOLTAGE(V) FIG.8 Body Diode Forward Voltage Variation with Source Current 50 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 VDS =-10V ID =1A -ID , DRAIN CURRENT(A) 10 RD S( ) ON Lim it ms 10 0m s DC Is 10 11 0.1 0.03 VDS=-4.5V Single Pulse TC =25 C 0.1 1 10 20 50 Q g ,TOTAL GATE CHARGE(nC) VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge V DD FIG.10 Maximum Safe Operating Area ton V IN D VG S R GE N G RL V OUT V OUT 10% toff tr 90% td(on) td(off) 90% 10% tf INVE R TE D 90% S V IN 50% 10% 50% PULS E WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms WEITRON http://www.weitron.com.tw WT-2301 WE IT R ON 10 NORMALIZED TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 PDM t1 on 0.1 0.1 0.05 0.02 t2 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 0.01 0.00001 1. R jA (t)=r (t) * R j A 2. R jA=See Datasheet 3. TjM-TA = PDM* R jA(t) 4. Duty Cycle, D=t1/t 2 10 100 1000 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE WEITRON http://www.weitron.com.tw WT-2301 SOT-23 Package Outline Dimensions Unit:mm A T OP V IE W B C E G H D K J L M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw |
Price & Availability of WT2301
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